Factory Lead Time  

12 Weeks

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount  

Surface Mount, Through Hole

Mounting Type  

Surface Mount

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

3.8W Ta 200W Tc

Current - Continuous Drain (Id) @ 25℃  

160A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.3V 10V

Turn Off Delay Time  

38 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

3V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tape & Reel (TR)

Series  

HEXFET®

Published  

2002

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

4mOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY

Voltage - Rated DC  

40V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Current Rating  

160A

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

3.8W

Case Connection  

DRAIN

Turn On Delay Time  

18 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

4m Ω @ 95A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

6600pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

140nC @ 5V

Rise Time  

270ns

Vgs (Max)  

±20V

Fall Time (Typ)  

130 ns

Continuous Drain Current (ID)  

160A

Threshold Voltage  

3V

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

40V

Pulsed Drain Current-Max (IDM)  

640A

Dual Supply Voltage  

40V

Avalanche Energy Rating (Eas)  

520 mJ

Nominal Vgs  

3 V

Height  

4.703mm

Length  

10.668mm

Width  

4.826mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Contains Lead, Lead Free